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Abstract
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In this study, a numerical model was used to calculate the Shockley-Read-Hall (SRH) current density in InGaN/GaN multiple-quantum-well (MQW) solar cells (SCs) under temperature. Our calculations demonstrated that the Huang-Rhys factor of light holes and split of band holes had the highest contributions to hole capture coefficients (60% and 30%, respectively). It was further found that a change in temperature up to 300K could increase the electron, holes, and equal capture coefficients in the quantum well. Based on the result, it could increase the radius of the point defects and longitudinal optical (LO) phonon scattering integral, decrease the LO phonon energy, and increase the SRH coefficient and current in MQW regions, respectively. Overall, it was revealed that the performance of SCs is better when the SRH current is lower, indicating that temperature plays a negative role in the performance of these solar cells.
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