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Abstract
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PbPdO2, a gap gapless semiconductor, can be transformed into a spin gap gapless semiconductor structure by doping magnetic ions. This unique band band-gap structure serves as the foundation for distinctive physical properties. In this study, PbPd PbPd1-xMn xO2 (x = 0.05, 0.1, 0.15) thin films with (002) preferred orientation were prepared by laser pulse deposition (PLD)PLD). The structural, electroresistive and magnetoresistive properties were systematically characterized, and the results suggest that films with different Mn doping ratios both exhibit a currentcurrent-induced positive colossal electroresistance (CER) CER), and the CER values of PbPd PbPd1-xMn xO2 thin film s increase with the increase of Mn doping concentration. The CER values are severalfold magnitudes higher compared to those of the previously reported PbPdOPbPdO2 films possessing identical (002) orientation. Combined with first -principles calculationcalculation, the underlying influence mechanism of Mn doping on CER is elucidated. In situ X-ray photoelectron spectroscopy ( demonstratedemonstrates a close correlation between the positive CER and the band gap change induced by oxygen vacancies in PbPdPbPd1-xMn xO2. Additionally, it is observed that Mn Mn- doped films exhibit weak localization (WL) and weak anti anti-localization (WAL) quantum transport . Moreover, it is found that Mn doping can lead to a transition from WAL to WL WL, a few Mn doping enhances significantly weak anti anti-localization effect. However, with increasing Mn concentration, WAL effect is conversely weakened. The results of studies suggest strongly that PbPdOPbPdO2, one of the few oxide topological insulators , can display novel quantum transport behavior by ion doping .
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