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Abstract
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In AlGaN-based deep ultraviolet laser diodes (DUV LDs), an electron blocking layer (EBL) in the p-type region is often utilized to control electron overflow. However, Al-rich semiconductor DUV LDs EBL can be difficult to p-doped and have a highly complicated structure. Furthermore, the composition of Aluminum (Al) Quantum Barriers (QB) in multiple quantum well (MQW) matters to the performance of AlGaN-based DUV laser diodes. Omitting the EBL and reducing the Al content of the QB enhance optical confinement and optical output power. Observing the performance parameters such as optical confinement factor (OCF), emitted power, band diagram, carrier concentration, and stimulated recombination, it may be found effective. In this paper, by using crosslight software LASTIP, three DUV LD devices with a nominated wavelength of 267.5 nm are simulated and compared. In contrast to the reference DUV LD with the p-type EBL, the proposed EBL-free DUV LD with reduced Al composition in QBs is applied in MQW. It resulted in a 21.11% improvement in Optical confinement factor (OCF), and an increase in output power.
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